[TuP3A] Epitaxy and process | CSW2026

Session Details

Poster SessionScope A:Epitaxy and process technologies

[TuP3A]Epitaxy and process

Tue. May 26, 2026 2:00 PM - 4:00 PM JST
Tue. May 26, 2026 5:00 AM - 7:00 AM UTC

Room Poster(3rd floor)

[TuP3A-01]Self-aligned InGaAs FinFETs on Insulator by Lateral Epitaxy

〇Ziyang Gong¹, Weizhuo Liu¹, Xiangquan Liu¹, Renqiang Zhu¹, Kei May Lau¹ (1. The Hong Kong Univ. of Sci. and Tech. (Hong Kong))

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[TuP3A-02]Circularly Polarized Luminescence Properties of Dilute Nitride GaInNAs/GaAs Multiple Quantum Wells with Spin-Filtering Defects

〇Eita Tagawa¹, Ayano Morita¹, Keisuke Minehisa², Hiroto Kise¹, Junichi Takayama¹, Fumitaro Ishikawa², Akihiro Murayama¹, Satoshi Hiura¹ (1. IST, Hokkaido Univ. (Japan), 2. RCIQE, Hokkaido Univ. (Japan))

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[TuP3A-03]Independent Control of InAs Quantum Dot Geometry and Composition via InGaAs Bilayer Capping and Mid-Cap Annealing

〇Rhenish Simon¹, Haruto Okuizumi¹, Kazuki Koyama¹, Ronel Christian Roca¹, Itaru Kamiya¹ (1. Toyota Technological Institute (Japan))

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[TuP3A-04]Optimization of CCS-MOVPE Growth Parameters for High Peak Current Density InGaAs/AlAs Double-Barrier RTDs

〇Fabian van Essen¹, Jonathan Abts¹, Alexander Possberg¹, Jonas Watermann¹, Jan Ebbert¹, Nils Weimann¹ (1. The Univ. of Duisburg-Essen (Germany))

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[TuP3A-05]Nitrogen δ-Doped GaAs Nanowires Exhibiting Characteristic Structural and Emission Energy Modulation

〇Mahiro Sano¹, Keisuke Minehisa¹, Kantaro Sugihara¹, Hidetoshi Hashimoto¹, Yudai Yamashita², Yoshitaka Taniyasu², Kazuyuki Hirama², Kazuhide Kumakura¹, Fumitao Ishikawa¹ (1. Research Center for Integrated quantum Electronics (Japan), 2. Basic Research Laboratories (Japan))

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[TuP3A-06]Investigation on Morphology Evolution of MOCVD Regrown n⁺-GaN for Ohmic Contacts in GaN-based HEMTs

〇Yuxi Zhou¹, Jiejie Zhu¹, Mingchen Zhang¹, Lingjie Qin¹, Mengdi Li¹, Bowen Zhang¹, Xiaohua Ma¹ (1. National Engineering Research Center of Wide Band-gap Semiconductor, Faculty of Integrated Circuit, Xidian University (China))

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[TuP3A-07]Direct Quantitative Visualization of Band Profile across III-V Devices using Kelvin Probe Force Microscopy

〇Nobuyuki Ishida¹, Takuya Kawazu¹, Akihiro Ohtake¹, Takaaki Mano¹ (1. National Inst. for Materials Sci. (NIMS) (Japan))

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[TuP3A-08]Kinetic Pathways for Phase-Selective Growth of Indium Selenides by Molecular Beam Epitaxy

〇Abdelmajid Salhi¹, Atef Zekri¹, Anas Abutaha¹, Yongfeng Tong¹, Golibjon Berdiyorov¹, Sultan Alshaibani², Brahim Aissa¹ (1. Hamad Bin Khalifa University (Qatar), 2. King AbdulAziz City for Science and Technology (Saudi Arabia))

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[TuP3A-09]Optimization of Plasma Etching on 150 mm Indium Phosphide Wafers

〇Tom Simpson¹, Jay Burnett², Adam S. Beachey², Jacob Mitchell², Kerry Roberts², J. Iwan Davies³, Huma Ashraf², Samuel Shutts^1,4 (1. School of Physics and Astronomy, Cardiff Univ. (UK), 2. KLA Corp. (SPTS Division) (UK), 3. IQE plc. (UK), 4. Inst. for Compound Semiconductors, Cardiff Univ. (UK))

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[TuP3A-10]Electrical Transport Properties of InAs/InAsSb In-Plane Ultrahigh-Density Quantum Dot Layers

Yoshihiro Naruko¹, 〇Ryoga Kai¹, Toshiyuki Kaizu¹, Naoya Miyashita¹, Koichi Yamaguchi¹ (1. Univ. of Electro-Comm. (Japan))

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[TuP3A-11]Drastic increase of growth rate of epitaxially grown SiP
with increasing P concentration beyond atomic percentage of ~2%

〇NAOTO KUMAGAI¹, Toshifumi Irisawa¹, Yoshihiro Hayashi¹ (1. AIST (Japan))

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[TuP3A-12]Growth and characterization of InSb_1-xN_x thin films on GaAs(100) by MBE

〇Kosuke Teramae¹, Yuki Shirakawa¹, Hiroyuki Yaguchi¹, Sachie Fujikawa¹ (1. Saitama University (Japan))

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[TuP3A-13]Advanced GaN Epitaxy Platform with Integrated Parts Cleaning Chamber for High Throughput Manufacturing

〇Kenichi Eriguchi¹, Mizuki Yamanaka¹, Shun Narita¹, Keitaro Ikejiri¹, Kazutada Ikenaga¹ (1. Taiyo Nippon Sanso Corp. (Japan))

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[TuP3A-14]Comparison of Wafer Warpages Caused by Ni-P Films Formed on GaAs(001) and (111) Substrates

〇Koichiro Nishizawa^1,2, Ayumu Matsumoto², Takayuki Hisaka¹, Yoshikazu Kawai¹, Kaoru Kadoiwa¹, Yu Nakamura¹, Satoshi Ichikawa³, Kazuyuki Onoe¹, Yoshiki Kojima¹, Naoki Fukumuro², Shinji Yae² (1. Mitsubishi Electric Corp. (Japan), 2. Univ. of Hyogo (Japan), 3. Osaka Univ. (Japan))

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[TuP3A-15]Photoluminescence Study of GaPN Alloys Grown Using Sb as a Surfactant

〇Hibiki Saida¹, Kazuya Yagi¹, Shuhei Yagi¹, Yamato Kyuno², Keisuke Yamane² (1. Saitama University (Japan), 2. Toyohashi University of Technology (Japan))

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[TuP3A-16]Minimized Contact Resistivity to MOVPE-grown p-InGaAs:C

〇Jan Ebbert¹, Hao Zhang¹, Jonathan Abts¹, Fabian van Essen¹, Nils Weimann^1,2 (1. Dept. of Components for High Frequency Electronics, University of Duisburg-Essen (Germany), 2. Center for Nanointegration Duisburg-Essen (CENIDE) (Germany))

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[TuP3A-17]Evaluation of Swirl-Enhanced Wet Processing for Semiconductor
Manufacturing Using Multiphysics Simulation

〇V Someswar Rao¹, Cheng-Yao Lo¹ (1. National Tsing Hua University, Hsinchu, Taiwan (Taiwan))

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[TuP3A-18]Structural Evaluation of Thick Low-Temperature-Grown GaAs_1-xBi_x Films on GaAs(001) Substrates

〇Osamu Ueda¹, Noriaki Ikenaga², Kyosuke Ariyoshi³, Keisuke Minehisa⁴, Fumitaro Ishikawa⁴, Yoriko Tominaga³ (1. Meiji Uni. (Japan), 2. Kanazawa Inst. of Tech. (Japan), 3. Hiroshima Univ. (Japan), 4. Hokkaido Univ. (Japan))

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[TuP3A-19]Development of a High Sensitivity InGaAs-based 1.55um SACM Avalanche Photodiode for Mobility-Oriented Ranging Applications

〇DONGWOOK LEE¹ (1. Korea Photonics Technology Institute (Korea))

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[TuP3A-20]Quantum Well Width Dependence of Photoluminescence from InGaAs/GaAsSb Type-II Quantum Well on GaAs Substrate

〇Hikaru Nakano¹, Tomoki Funaki¹, Takeshi Fujisawa², Koji Maeda¹, Masakazu Arai¹ (1. Univ. of Miyazaki (Japan), 2. Hosei Univ. (Japan))

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[TuP3A-21]Demonstration of GaSbN-Based Thermoradiative Diodes Grown on GaP Substrates for Large-Area Scalability

〇Yamato Kyuno¹, Tetsuya Nakamura², Keito Sagane¹, Tensei Kawasaki¹, Hiroto Kawahara¹, Keisuke Yamane¹ (1. Toyohashi Tech. (Japan), 2. JAXA (Japan))

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[TuP3A-22]Cu₃N Growth by Mist CVD with N₂ Carrier Gas through NH₃ Aqueous Solution

〇Azuki Morita¹, Chisato Tsukioka¹, Hiroki Nagai¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹ (1. Kogakuin Univ. (Japan))

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[TuP3A-23]Selective Area Metalorganic Chemical Vapor Deposition of InGaAs/InP Quantum Wells Using a Shadow Mask Directly Attached on the Substrate

〇Takumi Yanagimoto¹, Akihiko Kasukawa^2,3, Masakazu Arai¹ (1. Univ. of Miyazaki (Japan), 2. National Taiwan University of Science and Technology (Taiwan), 3. Yushan Fellow, Ministry of Education (Taiwan))

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