[TuP3A] Epitaxy and process

[TuP3A-04] Optimization of CCS-MOVPE Growth Parameters for High Peak Current Density InGaAs/AlAs Double-Barrier RTDs

〇Fabian van Essen¹, Jonathan Abts¹, Alexander Possberg¹, Jonas Watermann¹, Jan Ebbert¹, Nils Weimann¹ (1. The Univ. of Duisburg-Essen (Germany))

This work investigates the growth of resonant tunneling diodes (RTDs) using a close coupled showerhead (CCS) reactor with liquid precursors. Different growth temperatures between 540°C and 620°C are used to investigate the influence on the IV characteristics reaching current densities of greater than 1 MA/cm^2 . Additionally, the interface quality and layer roughness are characterized using transmission electron microscopy (TEM), X-ray diffraction (XRD) and atomic force microscopy (AFM).