[TuP3A] Epitaxy and process

[TuP3A-05] Nitrogen δ-Doped GaAs Nanowires Exhibiting Characteristic Structural and Emission Energy Modulation

〇Mahiro Sano¹, Keisuke Minehisa¹, Kantaro Sugihara¹, Hidetoshi Hashimoto¹, Yudai Yamashita², Yoshitaka Taniyasu², Kazuyuki Hirama², Kazuhide Kumakura¹, Fumitao Ishikawa¹ (1. Research Center for Integrated quantum Electronics (Japan), 2. Basic Research Laboratories (Japan))

Nitrogen δ-doping was applied to GaAs nanowires (NWs) grown by molecular beam epitaxy to examine its effects on structural and optical properties. GaAs nanowires were grown with nitrogen δ-doping amounts systematically varied up to 0.3 monolayers (ML). Cross-sectional transmission electron microscopy (TEM) confirmed the formation of δ-doped layers. Intensity profile of the TEM images suggested a change in strain behavior around a N δ-doping amount of approximately 0.1 ML. Photoluminescence (PL) showed a red shift of the emission peak with N incorporation, reaching wavelengths up to 1030 nm. Around 0.1 ML, the emission peak exhibited a temporary blue shift followed by a further red shift, occurring in the same doping range as the structural changes identified by TEM.