Presentation Information
[TuP3A-06]Investigation on Morphology Evolution of MOCVD Regrown n+-GaN for Ohmic Contacts in GaN-based HEMTs
〇Yuxi Zhou1, Jiejie Zhu1, Mingchen Zhang1, Lingjie Qin1, Mengdi Li1, Bowen Zhang1, Xiaohua Ma1 (1. National Engineering Research Center of Wide Band-gap Semiconductor, Faculty of Integrated Circuit, Xidian University (China))
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