[TuP3A] Epitaxy and process

[TuP3A-08] Kinetic Pathways for Phase-Selective Growth of Indium Selenides by Molecular Beam Epitaxy

〇Abdelmajid Salhi¹, Atef Zekri¹, Anas Abutaha¹, Yongfeng Tong¹, Golibjon Berdiyorov¹, Sultan Alshaibani², Brahim Aissa¹ (1. Hamad Bin Khalifa University (Qatar), 2. King AbdulAziz City for Science and Technology (Saudi Arabia))

Indium selenides (In_xSe_y) are layered III-VI semiconductors exhibiting rich polymorphism and phase-dependent functional properties. We demonstrate two kinetic strategies for phase-selective growth of In_xSe_y by molecular beam epitaxy. Sn-mediated surfactant growth on Si (100) suppresses γ-In₂Se₃ and stabilizes single-phase γ-InSe, while flux-timing control using a pulsed indium supply under selenium overpressure enables a phase transformation from γ-In₂Se₃ to phase-pure β-In₂Se₃ on c-plane sapphire. These results establish kinetic growth control as an effective route for deterministic phase engineering in layered chalcogenides.