[TuP3A] Epitaxy and process

[TuP3A-10] Electrical Transport Properties of InAs/InAsSb In-Plane Ultrahigh-Density Quantum Dot Layers

Yoshihiro Naruko¹, 〇Ryoga Kai¹, Toshiyuki Kaizu¹, Naoya Miyashita¹, Koichi Yamaguchi¹ (1. Univ. of Electro-Comm. (Japan))

InAs/InAsSb in-plane ultrahigh-density (IP-UHD) quantum dots (QDs) with Si modulation-doped GaAs capping layers were grown on GaAs(001) substrates by molecular beam epitaxy, and their temperature dependences of in-plane I-V characteristics were measured under dark conditions. For the IP-UHD QD samples, the dark current increased sharply above approximately 240 K due to an increase in thermally generated carriers from the InAs/InAsSb QDs. Below approximately 230 K, electron transport within the InAs/InAsSb IP-UHD QD layer became dominant and was nearly independent of temperature. Furthermore, the electronic conduction in the IP-UHD QD layer could be controlled by electron injection from the metal electrode into the QDs, but was independent of the amount of electron pre-filling into the QDs.