[TuP3A] Epitaxy and process

[TuP3A-11] Drastic increase of growth rate of epitaxially grown SiP
with increasing P concentration beyond atomic percentage of ~2%

〇NAOTO KUMAGAI¹, Toshifumi Irisawa¹, Yoshihiro Hayashi¹ (1. AIST (Japan))

We report that the drastic change of the growth rate of SiP with increasing P concentration. The growth rate was constant at ~2 nm/min for P concentrations below 1×10²¹ cm^-3, whereas it increased sharply above 1×10²¹ cm^-3, reaching 4.5 nm/min at 2×10²¹ cm^-3. Cross-sectional TEM images of the SiP layer showed uniform contrast, and XRD revealed a single peak from SiP layer. The surface morphology remained almost unchanged with increasing P concentration. These results suggest that the change of the growth rate with P concentration is not attributed to the modulation of crystalline morphology, but to the chemical contribution of P atoms in Si crystal.