[TuP3A] Epitaxy and process

[TuP3A-12] Growth and characterization of InSb_1-xN_x thin films on GaAs(100) by MBE

〇Kosuke Teramae¹, Yuki Shirakawa¹, Hiroyuki Yaguchi¹, Sachie Fujikawa¹ (1. Saitama University (Japan))

We investigated the growth conditions (nitrogen RF power, V/III ratio, and growth rate) for InSbN growth on GaAs substrates using high-frequency nitrogen plasma assisted molecular beam epitaxy. We clarified how each growth condition affects the crystallinity and bandgap narrowing of the thin films.