[TuP3A] Epitaxy and process

[TuP3A-13] Advanced GaN Epitaxy Platform with Integrated Parts Cleaning Chamber for High Throughput Manufacturing

〇Kenichi Eriguchi¹, Mizuki Yamanaka¹, Shun Narita¹, Keitaro Ikejiri¹, Kazutada Ikenaga¹ (1. Taiyo Nippon Sanso Corp. (Japan))

We present UR26K-CCD, a high-volume MOCVD platform for GaN RF/power and LED epitaxy on 200 mm wafers. A high-velocity narrow-channel reactor with a six-zone resistive heater and gear-stabilized wafer rotation enables precise control of temperature, pressure, V/III ratio, and zonal heater power, yielding highly uniform GaN-on-Si HEMT stacks with extrinsic-dopant-free carbon control while preserving crystalline quality. The three-layer laminar flow and zonal thermal management suppress gas-phase parasitics and maintain in-plane thickness, composition, and carbon concentration uniformity across 6 × 200 mm wafers and ~4.5 μm total epitaxial thickness. Operation from reduced to atmospheric pressure allows steep carbon profiles for leakage suppression without sacrificing morphology. An integrated ex-situ dry parts-cleaning module supports parallel epitaxy and parts cleaning, mitigating moisture-induced degradation of AlN nucleation layers and InGaN quantum wells by minimizing H₂O outgassing from reactor parts. This configuration reduces non-productive reactor time by more than 30%, stabilizes device performance, and enhances yield for both GaN power devices and InGaN/GaN LEDs, enabling robust, high-throughput manufacturing.