[TuP3A] Epitaxy and process

[TuP3A-15] Photoluminescence Study of GaPN Alloys Grown Using Sb as a Surfactant

〇Hibiki Saida¹, Kazuya Yagi¹, Shuhei Yagi¹, Hiroyuki Yaguchi¹, Yamato Kyuno², Keisuke Yamane² (1. Saitama University (Japan), 2. Toyohashi University of Technology (Japan))

GaPN alloys are promising materials for high-efficiency solar cell applications due to their lattice matching with Si and strong bandgap bowing induced by nitrogen incorporation. In this study, the effect of Sb surfactant during RF-MBE growth on the optical properties of GaPN alloys was investigated by photoluminescence measurements. While the PL peak wavelength shows a similar nitrogen concentration dependence regardless of Sb introduction, the integrated PL intensity is significantly enhanced by Sb surfactant, particularly at higher nitrogen concentrations above ~1.5%. These results indicate that Sb suppresses nonradiative recombination and improves the optical quality of GaPN alloys.