Presentation Information
[TuP3A-17]Evaluation of Swirl-Enhanced Wet Processing for Semiconductor
Manufacturing Using Multiphysics Simulation
〇V Someswar Rao1, Cheng-Yao Lo1 (1. National Tsing Hua University, Hsinchu, Taiwan (Taiwan))
Swirl-enhanced wet processing has the potential to improve transport-limited semiconductor etching and
cleaning by modifying near-wafer hydrodynamics. In this work, three-dimensional computational fluid dynamics
(CFD) simulations are used to investigate swirl-induced flow in a rotating wet bath containing a 12-inch wafer. The
flow is modeled using the Reynolds-averaged Navier-Stokes (RANS) k-ε formulation, and rotational speeds from 50 to
1000 rpm are examined for configurations with and without passive sidewall bump structures. Results show that, in
smooth-wall baths, velocity and pressure gradients remain confined near the sidewall at low rpm, yielding weak near
wafer transport, whereas high rpm is required to generate a centralized vortex. In contrast, the bump-assisted
configuration induces secondary vortices that
producing comparable near-wafer velocity, pressure redistribution, and viscous boundary-layer thinning at 40-60%
lower rotational speed.
cleaning by modifying near-wafer hydrodynamics. In this work, three-dimensional computational fluid dynamics
(CFD) simulations are used to investigate swirl-induced flow in a rotating wet bath containing a 12-inch wafer. The
flow is modeled using the Reynolds-averaged Navier-Stokes (RANS) k-ε formulation, and rotational speeds from 50 to
1000 rpm are examined for configurations with and without passive sidewall bump structures. Results show that, in
smooth-wall baths, velocity and pressure gradients remain confined near the sidewall at low rpm, yielding weak near
wafer transport, whereas high rpm is required to generate a centralized vortex. In contrast, the bump-assisted
configuration induces secondary vortices that
producing comparable near-wafer velocity, pressure redistribution, and viscous boundary-layer thinning at 40-60%
lower rotational speed.
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