Presentation Information
[TuP3A-19]Development of a High Sensitivity InGaAs-based 1.55um SACM Avalanche Photodiode for Mobility-Oriented Ranging Applications
〇DONGWOOK LEE1 (1. Korea Photonics Technology Institute (Korea))
Highly sensitive photodetection at 1.55 um is essential for mobility-oriented ranging systems such as LiDAR. InGaAs/InP avalanche photodiodes (APDs) operated in linear mode are widely used due to their high responsivity and internal gain. The separation of absorption, charge, and multiplication (SACM) structure enables independent optimization of absorption and avalanche processes, improving device stability.
In this work, front-illuminated InGaAs/InP SACM APDs were grown on InP substrates by metal-organic chemical vapor deposition. The epitaxial structure consists of a lattice-matched In0.53Ga0.47As absorption layer, an intrinsic InP multiplication layer, and a graded InGaAsP charge control layer, with thicknesses of approximately 3.6 um and 350 nm, respectively. A 2x2 APD array with 200 um diameter circular mesas was fabricated using beveled mesa sidewalls and surface passivation to suppress leakage current.
Under 1550 nm illumination, the device exhibited a punch-through voltage of about 12 V and a breakdown voltage of about 64 V. A low dark current of 4.9 nA at 0.9 Vbr and a multiplication gain of about 33 were achieved. The APD showed a broad spectral response from 924 to 1703 nm, with a peak responsivity of 0.893 A/W and a maximum quantum efficiency of 78.6 percent at 1550 nm, demonstrating its suitability for high-sensitivity near-infrared photodetection.
In this work, front-illuminated InGaAs/InP SACM APDs were grown on InP substrates by metal-organic chemical vapor deposition. The epitaxial structure consists of a lattice-matched In0.53Ga0.47As absorption layer, an intrinsic InP multiplication layer, and a graded InGaAsP charge control layer, with thicknesses of approximately 3.6 um and 350 nm, respectively. A 2x2 APD array with 200 um diameter circular mesas was fabricated using beveled mesa sidewalls and surface passivation to suppress leakage current.
Under 1550 nm illumination, the device exhibited a punch-through voltage of about 12 V and a breakdown voltage of about 64 V. A low dark current of 4.9 nA at 0.9 Vbr and a multiplication gain of about 33 were achieved. The APD showed a broad spectral response from 924 to 1703 nm, with a peak responsivity of 0.893 A/W and a maximum quantum efficiency of 78.6 percent at 1550 nm, demonstrating its suitability for high-sensitivity near-infrared photodetection.
Comment
To browse or post comments, you must log in.Log in