[TuP3A] Epitaxy and process

[TuP3A-22] Cu₃N Growth by Mist CVD with N₂ Carrier Gas through NH₃ Aqueous Solution

〇Azuki Morita¹, Chisato Tsukioka¹, Hiroki Nagai¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹ (1. Kogakuin Univ. (Japan))

Cu₃N growth by the Mist CVD was investigated by focusing on carrier gas. Previously, a N₂ dry gas was adopted for the growth. In the case, the growth with a short growth time less than 1 hour was allowed because the viscosity of the source solution increased as a function of the time. A mixture phase composed of Cu₃N and Cu₂O was observed from the grown layers with a long growth time over 60 min. It was clarified that this reason was attributed to the ammonia volatilization from the solution during a mist formation. Thus, we investigated a N₂ bubbled carrier gas (BCG) through an NH₃ aqueous solution during Cu₃N growth by the Mist CVD. The results indicated that the BCG was effective to prevent the ammonia volatilization. This leads to the stable source supply during the mist formation. As a result, a single phase Cu₃N growth was achieved with a long growth time of 90 and 120 min.