[TuP3A] Epitaxy and process

[TuP3A-23] Selective Area Metalorganic Chemical Vapor Deposition of InGaAs/InP Quantum Wells Using a Shadow Mask Directly Attached on the Substrate

〇Takumi Yanagimoto¹, Akihiko Kasukawa^2,3, Masakazu Arai¹ (1. Univ. of Miyazaki (Japan), 2. National Taiwan University of Science and Technology (Taiwan), 3. Yushan Fellow, Ministry of Education (Taiwan))

We directly attached a silicon-oxide-insulator patterned substrate to an InP substrate and performed a selective area metal-organic vapor phase epitaxy of InGaAs/InP quantum wells. Micro-PL measurements confirmed a wavelength shift of 37 meV within the aperture.