[TuP3A] Epitaxy and process

2:00 PM - 4:00 PM JST(5:00 AM - 7:00 AM UTC)

[TuP3A-25 LN] Growth of GaAs/AlGaAs Distributed Bragg Reflectors on GaAs(111)B for {111}-Oriented Quantum Dot Photonic Structures

〇Yusuke Hayashi¹, Akihiro Ohtake¹, Takaaki Mano¹ (1. NIMS (Japan))

Entangled-photon sources based on III–V semiconductor quantum dots (QDs) are promising for on-demand quantum photonic applications. In particular, high-quality telecom-wavelength QDs have been realized on on-axis GaAs(111)A substrates by droplet epitaxy. However, improving photon extraction efficiency remains a major challenge. GaAs/AlGaAs distributed Bragg reflectors (DBRs) are essential for this purpose, but direct growth of high-quality high-Al-content DBRs on on-axis GaAs(111)A is extremely difficult. In this study, we report the growth of a GaAs/AlGaAs DBR for the 1.3 μm wavelength range on an on-axis GaAs(111)B substrate by molecular beam epitaxy (MBE). By employing As₂ and In-assisted growth, we obtained a 15-pair DBR with a center wavelength of 1357 nm and a reflectivity of 92.6%. These results provide a basis for integrating DBR structures with (111)A-oriented QDs through epitaxial polarity inversion.