Presentation Information

[TuP3B-03]O2 Plasma-ashing-related Damage on InP-HEMTs
During Back-end-of-line Processing

〇Taro Sasaki1, Hiroki Sugiyama1, Yuki Yoshiya1, Takuya Hoshi1, Fumito Nakajima1 (1. Device Technology Labs., NTT, Inc. (Japan))

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