Presentation Information
[TuP3B-03]O2 Plasma-ashing-related Damage on InP-HEMTs
During Back-end-of-line Processing
〇Taro Sasaki1, Hiroki Sugiyama1, Yuki Yoshiya1, Takuya Hoshi1, Fumito Nakajima1 (1. Device Technology Labs., NTT, Inc. (Japan))
The effect of various BEOL processes on the DC characteristics of InP-HEMTs were investigated for establishing a robust MMIC process.
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