Session Details
[TuP3B]B. RF and THz devices
Tue. May 26, 2026 2:00 PM - 4:00 PM JST
Tue. May 26, 2026 5:00 AM - 7:00 AM UTC
Tue. May 26, 2026 5:00 AM - 7:00 AM UTC
Room Poster(3rd floor)
[TuP3B-01]Impact of Base Under-Cut Etching on The Performance of Type-II
InP/GaAsSb DHBTs
〇Mojtaba Ebrahimi Maroufi1, Akshay Mahadev Arabhavi1, Sara Hamzeloui1, Filippo Ciabattini1, Olivier Ostinelli1, Colombo Bolognesi1 (1. ETH Zurich (Switzerland))
[TuP3B-02]Origin of Transconductance Flattening in Graded AlGaN Channel HEMTs: Role of Mobility–Field Linearity
〇Chia-Yu Hung1, Yuh-Renn Wu1 (1. National Taiwan University (Taiwan))
[TuP3B-03]O2 Plasma-ashing-related Damage on InP-HEMTs
During Back-end-of-line Processing
〇Taro Sasaki1, Hiroki Sugiyama1, Yuki Yoshiya1, Takuya Hoshi1, Fumito Nakajima1 (1. Device Technology Labs., NTT, Inc. (Japan))
[TuP3B-04]Proposal of a second-harmonic generation device operating above 2 THz with four integrated resonant tunneling diodes
〇Ayumu Koyama1 (1. Inst. of Sci. Tokyo (Japan))
[TuP3B-05]Characterizations of triple-barrier resonant tunneling diodes with integrated bow-tie antennas exhibiting both oscillation and zero bias rectification in J-band
〇Michihiko Suhara1, Masato Hatori1, Jun Iwai1, Kazuki Sudo1, Reisuke Goto1, Kaito Maekawa1, Taiki Terano1, Kik Alfred1, Kiyoto Asakawa2, Issei Watanabe3, Ryuto Machida3, Kouichi Akahane3 (1. Tokyo Metropolitan Univ. (Japan), 2. Tokyo Metropolitan College of Indus. Tech. (Japan), 3. NICT (Japan))