[TuP3B] B. RF and THz devices

[TuP3B-04] Proposal of a second-harmonic generation device operating above 2 THz with four integrated resonant tunneling diodes

〇Ayumu Koyama¹ (1. Inst. of Sci. Tokyo (Japan))

We propose a device that enables signal generation above 2 THz by exploiting the intrinsic nonlinearity of RTDs. The device integrates four RTDs that are mutually injection-locked. By adjusting the synchronization conditions and bias voltages, the phases of the terahertz signals generated by each RTD can be controlled, allowing the second-harmonic components to be coherently combined and radiated through an antenna. Theoretical calculations indicate that a radiated output power of approximately 6 µW can be achieved at 2.5 THz.