[TuP3B] B. RF and THz devices

[TuP3B-05] Characterizations of triple-barrier resonant tunneling diodes with integrated bow-tie antennas exhibiting both oscillation and zero bias rectification in J-band

〇Michihiko Suhara¹, Masato Hatori¹, Jun Iwai¹, Kazuki Sudo¹, Reisuke Goto¹, Kaito Maekawa¹, Taiki Terano¹, Kik Alfred¹, Kiyoto Asakawa², Issei Watanabe³, Ryuto Machida³, Kouichi Akahane³ (1. Tokyo Metropolitan Univ. (Japan), 2. Tokyo Metropolitan College of Indus. Tech. (Japan), 3. NICT (Japan))

In this paper, focusing on InP based compound semiconductor heterostructure TBRTDs, we report experimental observation of oscillation and zero bias rectification in J-band (220-330 GHz), and characterization of S-parameters up to 110 GHz in the TBRTD fabricated on the identical MBE-growth epitaxial wafer.