Presentation Information

[TuP3C-01]Improvement of SiC MOSFETs body diode Qrr up to 30% through semiconductor substrate engineering

〇Eric GUIOT GUIOT1, Frédéric Allibert1, Walter Schwarzenbach1 (1. SOITEC (France))

Password required to view


Comment

To browse or post comments, you must log in.Log in