[TuP3C] Power Devices | CSW2026

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Session Details

Poster SessionScope C: Power devices

[TuP3C]Power Devices

Tue. May 26, 2026 2:00 PM - 4:00 PM JST
Tue. May 26, 2026 5:00 AM - 7:00 AM UTC

Room Poster(3rd floor)

[TuP3C-01]Improvement of SiC MOSFETs body diode Qrr up to 30% through semiconductor substrate engineering

〇Eric GUIOT GUIOT¹, Frédéric Allibert¹, Walter Schwarzenbach¹ (1. SOITEC (France))

Comment()

[TuP3C-02]Distribution of Deep-Level Nonradiative Recombination Centers in 4H-SiC Investigated by Laser Heterodyne Photothermal Displacement Method

〇Kouyou Harada¹, Masashi Kato², Atsuhiko Fukuyama¹ (1. Univ. of Miyazaki (Japan), 2. Nagoya Inst. of Tech (Japan))

Comment()

[TuP3C-03]Low Contact Resistance on Lightly Doped 4H-SiC for Sensor Devices

Chenxiao Yu¹, Huolin Huang¹, 〇Yung C. Liang² (1. Dalian University of Technology (China), 2. National University of Singapore (Singapore))

Comment()

[TuP3C-04]Investigation of Gate Reliability of p-GaN Gate AlGaN/GaN MIS-HEMTs with a GaON/Al₂O₃ Gate Dielectric Stack

〇Si-Hong Chen¹, Shao-hsiang Hsu¹, Sheng-Kai Chen Chen¹, Chieh-Siang Kuo¹, Jen-Inn Chyi¹ (1. National Central University (Taiwan))

Comment()

[TuP3C-05]Enhanced Gate Reliability and Low Leakage in p-GaN MOS-Gate HEMTs Using Sputter-Deposited SiO₂ Gate Dielectric

〇Jiun Oh¹, Minji Kim¹, Joon Seop Kwak¹ (1. Korea Inst. of Energy Tech. (Korea))

Comment()

[TuP3C-06]Improvement of current collapse characteristics in GaN HEMTs by employing periodic recessed patterns for ohmic contacts

〇Juyeong Park¹, Jae-Hyung Jang² (1. Gwangju Institute of Science and Technology (Korea), 2. Korea Institute of Energy Technology (Korea))

Comment()

[TuP3C-07]Dual-Layer p-GaN Gate AlGaN/GaN HEMTs on 150 mm Si Substrates

〇Jun-Zhe Wang¹, Kai-Chieh Chiu¹, Sheng-Kai Chen¹, Jen-Inn Chyi¹ (1. National Central Univ. (Taiwan))

Comment()

[TuP3C-08]Electrical Characteristics of p-GaN Gate E-Mode AlGaN/GaN HEMTs with Different Residual p-GaN Thicknesses

〇Jihun Lee¹, Dongchan Kim¹, Namhun Kim¹, Younghun Han², Seungeon Ahn², Yoonseok Kim², Juneo Song³ (1. Department of IT Semiconductor Convergence Engineering, Tech Univ. of Korea (TUK) (Korea), 2. Department of Semiconductor Engineering, Tech Univ. of Korea (TUK) (Korea), 3. Wavelord Co., Ltd (Korea))

Comment()

[TuP3C-09]Inversion-type GaN MOSFETs Fabricated by Applying Long-term 300°C Annealing Simultaneously to MOS Interfaces and Ohmic Contacts

〇Hiroto Akabane¹, Hinata Karasawa¹, Masanobu Takahashi¹, Masamichi Akazawa¹ (1. Hokkaido University (Japan))

Comment()

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CSW2026

Session Details

[TuP3C]Power Devices

[TuP3C-01]Improvement of SiC MOSFETs body diode Qrr up to 30% through semiconductor substrate engineering

[TuP3C-02]Distribution of Deep-Level Nonradiative Recombination Centers in 4H-SiC Investigated by Laser Heterodyne Photothermal Displacement Method

[TuP3C-03]Low Contact Resistance on Lightly Doped 4H-SiC for Sensor Devices

[TuP3C-04]Investigation of Gate Reliability of p-GaN Gate AlGaN/GaN MIS-HEMTs with a GaON/Al₂O₃ Gate Dielectric Stack

[TuP3C-05]Enhanced Gate Reliability and Low Leakage in p-GaN MOS-Gate HEMTs Using Sputter-Deposited SiO₂ Gate Dielectric

[TuP3C-06]Improvement of current collapse characteristics in GaN HEMTs by employing periodic recessed patterns for ohmic contacts

[TuP3C-07]Dual-Layer p-GaN Gate AlGaN/GaN HEMTs on 150 mm Si Substrates

[TuP3C-08]Electrical Characteristics of p-GaN Gate E-Mode AlGaN/GaN HEMTs with Different Residual p-GaN Thicknesses

[TuP3C-09]Inversion-type GaN MOSFETs Fabricated by Applying Long-term 300°C Annealing Simultaneously to MOS Interfaces and Ohmic Contacts

[TuP3C-10]Tunable Dielectric Films by Atomic Layer Deposition for Ultra-Wide Bandgap Semiconductors

[TuP3C-11]Mist Thermal Oxidation on Si and GaN Surfaces Using Mist-CVD Method

[TuP3C-12]Impact of Body Trench Structure on Electrical Performance in Vertical GaN Trench MOSFET

[TuP3C-13]Mitigating Trench-Corner Breakdown in High-Current-Density Vertical GaN MOSFETs

[TuP3C-14]Performance Analysis of a GaN Merged-PiN-Schottky (MPS) Power Device as a Function of Design Parameters

[TuP3C-15]Electrical Characteristics of β-Ga₂O₃ Recess-Gate MOSFETs With Different UID Layer Thicknesses

Session Details

[TuP3C]Power Devices

[TuP3C-01]Improvement of SiC MOSFETs body diode Qrr up to 30% through semiconductor substrate engineering

[TuP3C-02]Distribution of Deep-Level Nonradiative Recombination Centers in 4H-SiC Investigated by Laser Heterodyne Photothermal Displacement Method

[TuP3C-03]Low Contact Resistance on Lightly Doped 4H-SiC for Sensor Devices

[TuP3C-04]Investigation of Gate Reliability of p-GaN Gate AlGaN/GaN MIS-HEMTs with a GaON/Al2O3 Gate Dielectric Stack

[TuP3C-05]Enhanced Gate Reliability and Low Leakage in p-GaN MOS-Gate HEMTs Using Sputter-Deposited SiO2 Gate Dielectric

[TuP3C-06]Improvement of current collapse characteristics in GaN HEMTs by employing periodic recessed patterns for ohmic contacts

[TuP3C-07]Dual-Layer p-GaN Gate AlGaN/GaN HEMTs on 150 mm Si Substrates

[TuP3C-08]Electrical Characteristics of p-GaN Gate E-Mode AlGaN/GaN HEMTs with Different Residual p-GaN Thicknesses

[TuP3C-09]Inversion-type GaN MOSFETs Fabricated by Applying Long-term 300°C Annealing Simultaneously to MOS Interfaces and Ohmic Contacts

[TuP3C-10]Tunable Dielectric Films by Atomic Layer Deposition for Ultra-Wide Bandgap Semiconductors

[TuP3C-11]Mist Thermal Oxidation on Si and GaN Surfaces Using Mist-CVD Method

[TuP3C-12]Impact of Body Trench Structure on Electrical Performance in Vertical GaN Trench MOSFET

[TuP3C-13]Mitigating Trench-Corner Breakdown in High-Current-Density Vertical GaN MOSFETs

[TuP3C-14]Performance Analysis of a GaN Merged-PiN-Schottky (MPS) Power Device as a Function of Design Parameters

[TuP3C-15]Electrical Characteristics of β-Ga2O3 Recess-Gate MOSFETs With Different UID Layer Thicknesses

[TuP3C-04]Investigation of Gate Reliability of p-GaN Gate AlGaN/GaN MIS-HEMTs with a GaON/Al₂O₃ Gate Dielectric Stack

[TuP3C-05]Enhanced Gate Reliability and Low Leakage in p-GaN MOS-Gate HEMTs Using Sputter-Deposited SiO₂ Gate Dielectric

[TuP3C-15]Electrical Characteristics of β-Ga₂O₃ Recess-Gate MOSFETs With Different UID Layer Thicknesses