[TuP3C] Power Devices

[TuP3C-06] Improvement of current collapse characteristics in GaN HEMTs by employing periodic recessed patterns for ohmic contacts

〇Juyeong Park¹, Jae-Hyung Jang² (1. Gwangju Institute of Science and Technology (Korea), 2. Korea Institute of Energy Technology (Korea))

High-electron-mobility transistors (HEMTs) based on InAlGaN/GaN heterostructures were fabricated. To improve the on-resistance characteristics, periodically recessed patterns were employed in the ohmic contact region. By varying the geometries of the recessed patterns, the sidewall lengths were modulated and its effect on the electrical performance of the devices were investigated. The fabricated HEMTs having periodic recessed ohmic contact exhibited the improved ohmic contact properties and the reduced current collapse.