Presentation Information
[TuP3C-07]Dual-Layer p-GaN Gate AlGaN/GaN HEMTs on 150 mm Si Substrates
〇Jun-Zhe Wang1, Kai-Chieh Chiu1, Sheng-Kai Chen1, Jen-Inn Chyi1 (1. National Central Univ. (Taiwan))
Normally-off p-GaN gate AlGaN/GaN HEMTs are widely used in power applications; however, achieving
a high VTh without increasing RON remains challenging due to Mg activation and diffusion. In this work, p-GaN gate
HEMTs with a UID-GaN interlayer and different Mg doping profiles were fabricated and compared. The dual-layer
p-GaN structure exhibits a higher VTh while maintaining a comparable RON, which can be attributed to a more
uniform Mg distribution and enhanced conduction band uplift at the AlGaN/GaN interface. In addition, full-wafer
measurements show reduced variations in RON, VTh, and breakdown voltages, demonstrating improved uniformity
and process stability. These results indicate that dual-layer p-GaN combined with a UID-GaN interlayer is an
effective approach for normally-off GaN HEMTs.
a high VTh without increasing RON remains challenging due to Mg activation and diffusion. In this work, p-GaN gate
HEMTs with a UID-GaN interlayer and different Mg doping profiles were fabricated and compared. The dual-layer
p-GaN structure exhibits a higher VTh while maintaining a comparable RON, which can be attributed to a more
uniform Mg distribution and enhanced conduction band uplift at the AlGaN/GaN interface. In addition, full-wafer
measurements show reduced variations in RON, VTh, and breakdown voltages, demonstrating improved uniformity
and process stability. These results indicate that dual-layer p-GaN combined with a UID-GaN interlayer is an
effective approach for normally-off GaN HEMTs.
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