Presentation Information
[TuP3C-08]Electrical Characteristics of p-GaN Gate E-Mode AlGaN/GaN HEMTs with Different Residual p-GaN Thicknesses
〇Jihun Lee1, Dongchan Kim1, Namhun Kim1, Younghun Han2, Seungeon Ahn2, Yoonseok Kim2, Juneo Song3 (1. Department of IT Semiconductor Convergence Engineering, Tech Univ. of Korea (TUK) (Korea), 2. Department of Semiconductor Engineering, Tech Univ. of Korea (TUK) (Korea), 3. Wavelord Co., Ltd (Korea))
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