[TuP3C] Power Devices

[TuP3C-08] Electrical Characteristics of p-GaN Gate E-Mode AlGaN/GaN HEMTs with Different Residual p-GaN Thicknesses

〇Jihun Lee¹, Dongchan Kim¹, Namhun Kim¹, Younghun Han², Seungeon Ahn², Yoonseok Kim², Juneo Song³ (1. Department of IT Semiconductor Convergence Engineering, Tech Univ. of Korea (TUK) (Korea), 2. Department of Semiconductor Engineering, Tech Univ. of Korea (TUK) (Korea), 3. Wavelord Co., Ltd (Korea))

This study investigates the impact of residual p-GaN thickness (0, 5, and 15 nm) in the Source/Drain (S/D) regions on the device characteristics of p-GaN gate E-mode AlGaN/GaN HEMTs. The results demonstrate that a 5-nm residual layer minimizes etching damage and series resistance, thereby achieving optimal ohmic contact and electrical performance.