Presentation Information
[TuP3C-09]Inversion-type GaN MOSFETs Fabricated by Applying Long-term 300°C Annealing Simultaneously to MOS Interfaces and Ohmic Contacts
〇Hiroto Akabane1, Hinata Karasawa1, Masanobu Takahashi1, Masamichi Akazawa1 (1. Hokkaido University (Japan))
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