[TuP3C] Power Devices

[TuP3C-10] Tunable Dielectric Films by Atomic Layer Deposition for Ultra-Wide Bandgap Semiconductors

〇Tyler J. Myers¹, Matthew Weimer¹, Sara Harris¹, Dane Lindblad¹, Arrelaine Dameron¹ (1. Forge Nano, Inc. (USA))

This work demonstrates advanced atomic layer deposition (ALD) techniques for creating high-quality, thick dielectric hafnium dioxide (HfO₂) films to boost the performance of wide bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductor devices. Metal oxide semiconductor capacitor (MOSCAP) devices were fabricated on Si substrates to compare two ALD processes: a traditional ozone-based method and a catalyst-assisted CRISP method. The CRISP approach showed significantly higher deposition rates, improved film density, lower carbon impurities, and excellent uniformity across wafer surfaces. While CRISP films had lower leakage, the ozone-based films exhibited higher dielectric constants and strength, attributed to their materials properties. Notably, Ga₂O₃ devices with 30 - 100 nm of HfO₂, deposited with the CRISP approach, dielectric barrier achieved up to near-theoretical electric field strengths with minimal leakage, showcasing the potential of these tunable ALD processes for scalable, next-generation power electronics.