[TuP3C] Power Devices

[TuP3C-12] Impact of Body Trench Structure on Electrical Performance in Vertical GaN Trench MOSFET

〇JUN-XIANG WANG¹, Jian-Jang Huang¹ (1. National Taiwan University (Taiwan))

This work demonstrates a vertical GaN MOSFET with a body trench structure to optimize gate control and reverse conduction. The device achieves a 3V reduction in threshold voltage (V_TH), a 61.5% decrease in threshold voltage hysteresis (V_TH), and an improved subthreshold swing (SS) of 0.846 V/dec. TCAD simulations and C-V analysis reveal that the body trench redistributes the lateral electric field, lowering interface trap density (D_it) to 1.7110¹¹ cm^-2eV^-1. Furthermore, reverse conduction current is enhanced by nearly three orders of magnitude via an alternative trench-assisted path.