Presentation Information
[TuP3C-14]Performance Analysis of a GaN Merged-PiN-Schottky (MPS) Power Device as a Function of Design Parameters
〇JuEun An1, Ho-Jun Lee1 (1. Pusan National University (Korea))
We propose an MPS device structure with improved process simplicity and enhanced electrical performance. The effects of design parameter variations on device performance are systematically analyzed.
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