[TuP3C] Power Devices

2:00 PM - 4:00 PM JST(5:00 AM - 7:00 AM UTC)

[TuP3C-16 LN] Thermometry of AlGaN/GaN Heterostructures Using μ-Raman Spectroscopies of Thin Si Films on Surfaces

Hayato Kobayashi¹, 〇Naoteru Shigekawa¹ (1. Osaka Metropolitan Univ. (Japan))

We fabricated two terminal devices with 200-μm-wide, 80-μm-long channels on an AlGaN/GaN heterostructure grown on a sapphire substrate. We synthesized 10-nm thick Si films between their two contacts by RF sputtering and annealing at 1000 ℃ before forming ohmic contacts. Relationships between the temperature rise at the center of their channels and the power dissipation were achieved based on the μ-Raman spectroscopy of the Si films. The estimated temperature rise agreed with that based on the PL spectra of GaN layers obtained for the same devices.