[TuP3E] E. Physics, spintronics, and novel device concepts

[TuP3E-02] Temperature Dependent Non-Local Voltage Induced by Valley Hall Effect in Bilayer MoS₂

Yusuke Nakayama¹, Yusuke Nakamura¹, Takeru Kobayashi¹, Kei Takahashi¹, David K. Ferry², Jonathan P. Bird^1,3, 〇Nobuyuki Aoki¹ (1. Chiba Univ. (Japan), 2. Arizona State Univ. (USA), 3. SUNY Baffalo (USA))

We study valley Hall effect in bilayer MoS2. Temperature dependence of the peak height and the position in the gate voltage of non-local voltage have been observed. We have confirmed VHE in such a bilayer TMDC is induced by breaking structural symmetry with sufficient perpendicular electric firld application.