[TuP3E] E. Physics, spintronics, and novel device concepts | CSW2026

Session Details

Poster SessionScope E: Physics, spintronics, and novel device concepts

[TuP3E]E. Physics, spintronics, and novel device concepts

Tue. May 26, 2026 2:00 PM - 4:00 PM JST
Tue. May 26, 2026 5:00 AM - 7:00 AM UTC

Room Poster(3rd floor)

[TuP3E-01]Adsorption of Cobalt (Co) and Nickel (Ni) Atoms on a Gallium Selenide (GaSe) Monolayer

〇Julián A. Aros-González¹, Camilo A. Huertas-Archila¹, Miguel J. Espitia-Rico¹ (1. Univ. Distrital Francisco José de Caldas (Colombia))

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[TuP3E-02]Temperature Dependent Non-Local Voltage Induced by Valley Hall Effect in Bilayer MoS₂

Yusuke Nakayama¹, Yusuke Nakamura¹, Takeru Kobayashi¹, Kei Takahashi¹, David K. Ferry², Jonathan P. Bird^1,3, 〇Nobuyuki Aoki¹ (1. Chiba Univ. (Japan), 2. Arizona State Univ. (USA), 3. SUNY Baffalo (USA))

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[TuP3E-03]Design and Characterization of GaN/AlN Resonant Tunneling Diodes with AlGaN Interlayers for Nonvolatile Memory Applications

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1. AIST (Japan))

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[TuP3E-04]"Device Fabrication towards Surface Phonon Irradiation on Josephson Junctions"

〇Ryusei Kawasoko^1,2, Tomoya Morita^1,2, Shohei Kobayashi^1,2, Shunsuke Ota³, Tetsuo Kodera¹, Takahiro Moriyama⁴, Seigo Tarucha^2,5, Sadashige Matsuo^1,2 (1. Dept. of Physics, Inst. of Science Tokyo (Japan), 2. RIKEN Center for Emergent Matter Science (Japan), 3. Dept. of Electrical and Electronic Engineering, Inst. of Science Tokyo (Japan), 4. Dept. of Materials Physics, Nagoya Univ. (Japan), 5. RIKEN Center for Quantum Computing (Japan))

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[TuP3E-05]Effect of Nitrogen Content on Spin-Polarization Amplification Dynamics in Tunnel-Coupled GaNAs Quantum Well/InGaAs Quantum Dots Structure

〇Yuma Suzuki¹, Hiroto Kise¹, Ayano Morita¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1. Hokkaido University (Japan))

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[TuP3E-06]Bias Voltage Dependence of Circularly Polarized Luminescence Properties of InGaAs Quantum Dots Sandwiched between GaNAs Quantum Wells

〇Kyota Nakadate¹, Hiroto Kise¹, Ayano Morita¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1. Hokkaido University (Japan))

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[TuP3E-07]Thermoelectric Property mapping for High-performance Integrated MgAgSb-MgCuSb System

〇JIANKANG LI¹, Airan LI¹, Longquan Wang¹, Takao Mori^1,2 (1. National Inst. for Materials Sci. (Japan), 2. The Univ. of Tsukuba (Japan))

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[TuP3E-08]Flexible MgAgSb thermoelectrics with exceptional performance

〇ZHAO HU^1,2, Takao Mori^1,2 (1. National Inst. for Materials (Japan), 2. The Univ. of Tsukuba (Japan))

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[TuP3E-09]Development of an Evaluation Method for Spatial Distribution of Permittivity

〇Hayato Kobayashi¹, Akira Sumiyoshi¹, Ranferi Cancino Betancourt¹, Shota Sato¹, Jun Nakamura¹ (1. The University of Electro-Communications (Japan))

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[TuP3E-10]Effect of RF power on the structural and electrical properties of earth-abundant ZnSnN₂ grown by reactive RF sputtering

〇Juchan Hwang¹, Young-ill Kim², Chul Kang^2,1, Kwangwook Park^1,3,4 (1. Advanced Materials Engineering, Jeonbuk National University (Korea), 2. Advanced Photonics Research Center, Gwangju Institute of Science and Technology (Korea), 3. Electronics and Information Engineering, Jeonbuk National University (Korea), 4. Hydrogen and Fuel Cell Research Center, Jeonbuk National University (Korea))

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