[TuP3E] E. Physics, spintronics, and novel device concepts

[TuP3E-05] Effect of Nitrogen Content on Spin-Polarization Amplification Dynamics in Tunnel-Coupled GaNAs Quantum Well/InGaAs Quantum Dots Structure

〇Yuma Suzuki¹, Hiroto Kise¹, Ayano Morita¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1. Hokkaido University (Japan))

A tunnel-coupled nanostructure consisting of InGaAs quantum dots and dilute nitride GaNAs quantum well can significantly amplify the electron spin polarization during light emission via a combination of the long spin lifetime of quantum dots and spin-filtering effect unique to GaNAs. In this study, we grew the tunnel-coupled nanostructures with different nitrogen content and investigated the effect of nitrogen content on the spin-polarization amplification dynamics at room temperature. Time-resolved circularly polarized photoluminescence results revealed that the spin-polarization amplification was accelerated with increasing nitrogen content.