[TuP3E] E. Physics, spintronics, and novel device concepts

[TuP3E-06] Bias Voltage Dependence of Circularly Polarized Luminescence Properties of InGaAs Quantum Dots Sandwiched between GaNAs Quantum Wells

〇Kyota Nakadate¹, Hiroto Kise¹, Ayano Morita¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1. Hokkaido University (Japan))

We fabricated electric-field-effect optical spin devices consisting of GaNAs spin-filtering quantum wells located above and below the InGaAs quantum dot. By applying an electric field to the devices, we controlled the band potential tilt and demonstrated at room temperature a large modulation of photoluminescence circular polarization degree, corresponding to the electron spin polarization. The maximum circular polarization degree reached 58% under flat band conditions, and its modulation from 10% to 58% was achieved by changing the applied electric field.