[TuP3E] E. Physics, spintronics, and novel device concepts

[TuP3E-10] Effect of RF power on the structural and electrical properties of earth-abundant ZnSnN₂ grown by reactive RF sputtering

〇Juchan Hwang¹, Young-ill Kim², Chul Kang^2,1, Kwangwook Park^1,3,4 (1. Advanced Materials Engineering, Jeonbuk National University (Korea), 2. Advanced Photonics Research Center, Gwangju Institute of Science and Technology (Korea), 3. Electronics and Information Engineering, Jeonbuk National University (Korea), 4. Hydrogen and Fuel Cell Research Center, Jeonbuk National University (Korea))

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