[TuP3E] E. Physics, spintronics, and novel device concepts

2:00 PM - 4:00 PM JST(5:00 AM - 7:00 AM UTC)

[TuP3E-10] Effect of RF power on the structural and electrical properties of earth-abundant ZnSnN₂ grown by reactive RF sputtering

Juchan Hwang¹、〇Young-ill Kim²、Chul Kang^2,1、Kwangwook Park^1,3,4 (1. Advanced Materials Engineering, Jeonbuk National University (Korea)、2. Advanced Photonics Research Center, Gwangju Institute of Science and Technology (Korea)、3. Electronics and Information Engineering, Jeonbuk National University (Korea)、4. Hydrogen and Fuel Cell Research Center, Jeonbuk National University (Korea))

Earth-abundant II-IV-N2 compounds have emerged as promising alternatives to conventional III-nitride semiconductors due to their low material cost and tunable optoelectronic properties. In this study, we investigate the effect of radio-frequency (RF) power on the structural, electrical, and optical properties of ZnSnN2 thin films grown via reactive RF sputtering. Scanning electron microscopy (SEM) reveals that increasing RF power from 30 W to 150 W increases the deposition rate from 0.04 nm/s to 0.40 nm/s, while the average columnar grain diameter decreases from 116 nm to 53 nm. Hall effect measurements indicate that higher RF power improves inter-grain transport, characterized by increased Hall mobility and reduced sheet resistance. However, terahertz time-domain spectroscopy (THz-TDS) reveals a contrasting trend in intra-grain properties: films grown at 30 W exhibit significantly higher microscopic mobility and longer scattering times than those grown at 150 W. These results suggest a critical trade-off between macroscopic connectivity and microscopic crystalline quality, controlled by deposition kinetics.