[TuP3E] E. Physics, spintronics, and novel device concepts

2:00 PM - 4:00 PM JST(5:00 AM - 7:00 AM UTC)

[TuP3E-12 LN] Rate-Based Analysis of Defect-Assisted Recombination Cycles Inclusive of Trap-Assisted Auger-Meitner Processes

Tanay Tak¹, Iris Celupica-Liu¹,〇 Yuh-Renn Wu², James S. Speck¹ (1. Univ. of California, Santa Barbara (USA), 2. National Taiwan Univ. (Taiwan))

Shockley-Read-Hall (SRH) recombination is commonly used to model the recombination rate associated with point defects when simulating devices. However, as the SRH model was developed treating only carrier capture processes that scale linearly with carrier density, such as multi-phonon emission and radiative capture, the defect mediated recombination rates and currents it predicts are accurate only in the low carrier density regimes. In this work, we extend the conventional SRH analysis to include trap-assisted Auger-Meitner processes, resulting in significant deviation of calculated defect mediated recombination rates and currents. We perform a case study for the recombination rates involving the Ca_Ga impurities in GaN.