[TuP3E] E. Physics, spintronics, and novel device concepts

2:00 PM - 4:00 PM JST(5:00 AM - 7:00 AM UTC)

[TuP3E-13 LN] A Metal-Oxide-Semiconductor p-GaN Gate HEMT on Si for Memory Applications

〇Zirui Zhou¹, Kei May Lau², Huaxing Jiang¹ (1. South China Univ. of Tech. (China), 2. Hong Kong Univ. of Sci. and Tech. (Hong Kong))

To enable the next generation of integrated power electronics, it is critical to develop memory technologies directly compatible with wide-bandgap semiconductors. In this work, we demonstrate a novel single-transistor (1T) GaN-based memory cell utilizing a metal-oxide-semiconductor p-GaN gate HEMT on Si substrates. By exploiting an electrically floating p-GaN layer as a dedicated charge storage node, this structure enables a marked reduction in architectural complexity while leveraging standard enhancement-mode GaN HEMT fabrication flows. The device exhibits exceptional programming speeds, achieving a large 3-V threshold voltage window between the ‘0’ and ‘1’ states with a write pulse of just 1 μs. Furthermore, the cell demonstrates a stable dynamic data retention exceeding 100 seconds. This architecture provides a highly viable approach for embedding complex sequential digital logic directly within GaN power systems.