[TuP3G] Oxide Materials & Devices

[TuP3G-01] Interface Characterization of Nanosheet Oxide Semiconductor

〇Nao Ogasawara¹, Mutsunori Uenuma², Takanori Takahashi¹, Yukiharu Uraoka¹ (1. Nara Institute of Science and Technology (Japan), 2. National Institute of Advanced Industrial Science and Technology (Japan))

In this study, capacitor structures suitable for the interface evaluation of nanosheet oxide semiconductors (OS) were investigated. We clarified the limitations of interface characterization using Back-Gate (BG) type with semiconductor layer underlaps, demonstrating that a structure eliminating underlaps is indispensable for accurate evaluation. As a solution, by employing a Top-Gate (TG) type that inherently eliminates parasitic components, we succeeded in the quantitative extraction of interface state density using the conductance method. Consequently, a reliable electrical interface evaluation method for nanosheet OS has been established.