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Session Details

Poster SessionScope G: Oxide materials and devices

[TuP3G]Oxide Materials & Devices

Tue. May 26, 2026 2:00 PM - 4:00 PM JST
Tue. May 26, 2026 5:00 AM - 7:00 AM UTC
Room Poster(3rd floor)

[TuP3G-01]Interface Characterization of Nanosheet Oxide Semiconductor

〇Nao Ogasawara1, Mutsunori Uenuma2, Takanori Takahashi1, Yukiharu Uraoka1 (1. Nara Institute of Science and Technology (Japan), 2. National Institute of Advanced Industrial Science and Technology (Japan))
Comment()

[TuP3G-02]Role of Oxygen Supply in Stabilizing Epitaxial β-Ga2O3 Growth on Sapphire Substrates

〇Wei-Chun Chen1, Wei-Lin Wang1, Kun-An Chiu1, Hung-Pin Chen1, Hui-Wen Chang1, Yu-Wei Lin1 (1. National Center for Instrumentation Res., National Inst. of Applied Res. (Taiwan))
Comment()

[TuP3G-03]Wavelength-Dependent Multilevel Memory Characteristics of a Graphene Oxide Optoelectronic Synaptic Device Fabricated by Spin Coating

〇JungBeen CHO1, JunHyeong Park1, SeungMin Song1, Seyeon Tak1, Sung-Nam Lee1 (1. Tech Univ. of Korea (Korea))
Comment()

[TuP3G-04]Molecular Beam Epitaxy of (-201) β-Ga2O3 and (002) κ-Ga2O3 on AlN

〇Andy Séguret1,2, Julien Bosch1, Marty Volant2,3, Ilyass Jellal1,2, Hervé Roussel2, Fabien Jourdan1, Yann Genuist1, Eirini Sarigiannidou2, Hanako Okuno3, Vincent Consonni2, Eva Monroy1 (1. Univ. Grenoble-Alpes, CEA, Grenoble INP, IRIG, PHELIQS, 38000 Grenoble (France), 2. Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, 38000 Grenoble (France), 3. Univ. Grenoble-Alpes, CEA, Grenoble INP, IRIG, MEM, 38000 Grenoble (France))
Comment()

[TuP3G-05]Hf/ZnO Plasmon Thin-Film Transistor for Near-Infrared Broadband Photodetection

〇Tsong-Sheng Lay1, Chia-Wei Hu1, Cheng-Han Tsai1 (1. National Chung Hsing University (Taiwan))
Comment()

[TuP3G-06]Deposition and Annealing Temperature Dependence of the Structural and Optical Properties of Mist-CVD-Grown Gallium Oxide Thin Films on c-plane Sapphire Substrates

〇Masatoshi Koyama1, Iori Yamasaki1, Shunsuke Enoki1, Misaki Nishikawa1, Kazuto Koike1, Akihiko Fujii1, Toshihiko Maemoto1 (1. Osaka Inst. Tech. (Japan))
Comment()

[TuP3G-07]Low-temperature Atomic Layer Deposition of ZnO Thin Film Enabling Optoelectronic Synaptic Behavior

〇JunHyeong Park1, JungBeen Cho1, SeungMin Song1, Seyeon Tak1, Sung-Nam Lee1 (1. TUKorea (Korea))
Comment()

[TuP3G-08]High-Sensitivity X-ray Detection Using Ga2O3-Based Devices

〇Sunjae Kim1,2, Hyeong-Yun Kim1, Dowon Lee1, JungHun Choi1, Ji-Hyeon Park1, Wan Sik Hwang2, Dae-Woo Jeon1 (1. Korea Inst. of Ceramic Eng. and Tech. (Korea), 2. Korea Aerospace univ. (Korea))
Comment()

[TuP3G-09]Growth and Characterization of β-(AlxGa1-x)2O3 Thin Films by MOCVD

〇Hyeong-Yun Kim1, Sunjae Kim1, Dowon Lee1, JungHun Choi1, Ji-Hyeon Park1, Dae-Woo Jeon1 (1. Korea Inst. of Ceramic Eng. and Tech. (Korea))
Comment()

[TuP3G-10]Properties of Needle-Shaped ZnO Crystals Using Zn(C5H7O2)2 Grown Under Atmospheric Pressure and Low Temperature Conditions

〇Jun Suzuki1, Mio Sakuma1, Yuji Imai1, Koji Kawasaki1, Yasuhiro Kashiwaba1, Keiji Komatsu2 (1. National Institute of Technology (KOSEN), Sendai College (Japan), 2. Nagaoka University of Technology (Japan))
Comment()

[TuP3G-11]Influence of Wrinkle Structures in Sol–Gel-derived ZnO Thin Films on Optoelectronic Synaptic Behaviors

〇Seyeon Tak1, SeungMin Song1, JungBeen Cho1, JunHyeong Park1, Sung-Nam Lee1 (1. Tech Univ. of Korea (Korea))
Comment()

[TuP3G-12]Thickness-dependent resistive swithcing behaviors of RF-sputtered Pt/Ga2O3/Pt memristors

〇Seung Min Song1, Jun Hyeong Park1, Jung Been Cho1, Se Yeon Tak1, Sung- Nam Lee1 (1. Tech Univ. of Korea (Korea))
Comment()

[TuP3G-13]Sequential RF Sputtering Enabled Zn Incorporation and Spinel Formation in Ga2O3 Thin Films

〇Deveshwar Sasikumar1, Venkatesh Narasihman1, Wei-Sheng Liu1, Balaji Gururajan1 (1. Yuan Ze Univ. (Taiwan))
Comment()

[TuP3G-14]Development of stable formation method of SrO thin film for STO thin film deposition by mist CVD method

〇Kun Liu1, Ozaki Tamako1, Li Liu1, Htet Su Wai1, Toshiyuki Kawaharamura1 (1. kochi university of technology (Japan))
Comment()

[TuP3G-15]V-shaped grooves formed on (−102) β-Ga2O3 using TMAH wet etching

〇Takayoshi Oshima1 (1. NIMS (Japan))
Comment()

[TuP3G-16]Fabrication of Bandgap-Tunable (InGa)2O3 Thin Films for UVA Photodetection via RF Sputtering and Thermal Diffusion

Che-Hao Liao1、Yu-Zhe Lin1、Pei Wen Liu1、〇ShihHung LIn1 (1. National Yunlin University of Science and Technology (Taiwan))
Comment()
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