[TuP3G] Oxide Materials & Devices

[TuP3G-03] Wavelength-Dependent Multilevel Memory Characteristics of a Graphene Oxide Optoelectronic Synaptic Device Fabricated by Spin Coating

〇JungBeen CHO¹, JunHyeong Park¹, SeungMin Song¹, Seyeon Tak¹, Sung-Nam Lee¹ (1. Tech Univ. of Korea (Korea))

Neuromorphic computing is based on the human neural network and enables information. Optoelectronic synaptic devices inspired by the visual system have attracted increasing interest. In this study, a graphene oxide (GO) -based optoelectronic synaptic device showed stable synaptic behavior with multiple resistance states under light stimulation. Unlike conventional GO-based devices, it exhibited multilevel memory behavior under both ultraviolet and visible light. Shorter wavelengths produced stronger and longer-lasting response due to trap-state-related charge processes, leading to long-term memory characteristics.