Presentation Information
[TuP3G-03]Wavelength-Dependent Multilevel Memory Characteristics of a Graphene Oxide Optoelectronic Synaptic Device Fabricated by Spin Coating
〇JungBeen CHO1, JunHyeong Park1, SeungMin Song1, Seyeon Tak1, Sung-Nam Lee1 (1. Tech Univ. of Korea (Korea))
Password required to view
Comment
To browse or post comments, you must log in.Log in