[TuP3G] Oxide Materials & Devices

[TuP3G-05] Hf/ZnO Plasmon Thin-Film Transistor for Near-Infrared Broadband Photodetection

〇Tsong-Sheng Lay¹, Chia-Wei Hu¹, Cheng-Han Tsai¹ (1. National Chung Hsing University (Taiwan))

Plasmon thin film transistors of Hf-doped ZnO (HZO) nanolayer channel are deposited on ITO substrates by atomic layer deposition. Au nanoparticles of varied absorption wavelengths are laterally-distributed on the channel surface to obtain broadband FWHM = 152nm and high-responsivity (R > 1A/W) photodetection in near-infrared (l = 800-1000nm).