[TuP3G] Oxide Materials & Devices

[TuP3G-12] Thickness-dependent resistive swithcing behaviors of RF-sputtered Pt/Ga₂O₃/Pt memristors

〇Seung Min Song¹, Jun Hyeong Park¹, Jung Been Cho¹, Se Yeon Tak¹, Sung- Nam Lee¹ (1. Tech Univ. of Korea (Korea))

Wide-bandgap oxide memristors are promising for next-generation nonvolatile memory and neuromorphic computing, and Ga₂O₃ is attractive due to its large bandgap and high thermal stability. In this study, Pt/Ga₂O₃ /Pt memristors fabricated on sapphire substrates were investigated to examine the effect of Ga₂O₃ resistive switching (RS) layer thickness on electrical characteristics. Ga₂O₃ films were deposited on Pt/sapphire by RF sputtering at 100 W, with thickness controlled by deposition time, followed by deposition of a Pt top electrode. The I-V characteristics and set/reset voltages were compared. With increasing RS thickness, leakage current decreased except at 100 nm. The set voltage increased while the reset voltage decreased, indicating thickness-dependent conductive filament formation and rupture. These results show that Ga₂O₃ RS thickness is a key parameter for tuning operating voltages and device performance.