[TuP3G] Oxide Materials & Devices

[TuP3G-13] Sequential RF Sputtering Enabled Zn Incorporation and Spinel Formation in Ga₂O₃ Thin Films

〇Deveshwar Sasikumar¹, Venkatesh Narasihman¹, Wei-Sheng Liu¹, Balaji Gururajan¹ (1. Yuan Ze Univ. (Taiwan))

This work reports on the fabrication of ZnGa₂O₄ thin films using a sequential RF magnetron sputtering strategy, where Ga₂O₃ and Zn are deposited alternately to facilitate controlled solid-state reaction. We demonstrate that the RF power applied to the Zn target critically influences the phase transformation kinetics and defect landscape. Structural characterization reveals that intermediate RF power enhances crystallinity and minimizes lattice strain, while excessive power induces disorder. Electrical measurements confirm the formation of highly resistive films with suppressed background carrier concentrations, validating the efficacy of this method for defect compensation in ultra-wide-bandgap oxides.