[TuP3G] Oxide Materials & Devices

[TuP3G-16] Fabrication of Bandgap-Tunable (InGa)₂O₃ Thin Films for UVA Photodetection via RF Sputtering and Thermal Diffusion

Che-Hao Liao¹、Yu-Zhe Lin¹、Pei Wen Liu¹、〇ShihHung LIn¹ (1. National Yunlin University of Science and Technology (Taiwan))

This work presents the fabrication of (InGa)₂O₃ thin films for UVA sensing using RF sputtering on c-plane sapphire substrates. By sequentially depositing Ga₂O₃ and In₂O₃ layers and subsequently applying high-temperature thermal diffusion, (InGa)₂O₃ film with a tunable bandgap in the range of 3.5–3.75 eV was obtained, allowing controllable UVA photodetection for skin protection applications. The sputtering–diffusion process is scalable and enables the production of high-quality thin films suitable for practical UVA sensing devices.