[TuP3G] Oxide Materials & Devices

2:00 PM - 4:00 PM JST(5:00 AM - 7:00 AM UTC)

[TuP3G-16] Fabrication of Bandgap-Tunable (InGa)2O3 Thin Films for UVA Photodetection via RF Sputtering and Thermal Diffusion

Che-Hao Liao¹, Yu-Zhe Lin¹, Pei Wen Liu¹, 〇ShihHung LIn¹ (1. National Yunlin University of Science and Technology (Taiwan))

This work presents the fabrication of (InGa)2O3 thin films for UVA sensing using RF sputtering on c-plane sapphire substrates. By sequentially depositing Ga2O3 and In2O3 layers and subsequently applying high-temperature thermal diffusion, (InGa)2O3 film with a tunable bandgap in the range of 3.5–3.75 eV was obtained, allowing controllable UVA photodetection for skin protection applications. The sputtering–diffusion process is scalable and enables the production of high-quality thin films suitable for practical UVA sensing devices.