[TuP3G] Oxide Materials & Devices

2:00 PM - 4:00 PM JST(5:00 AM - 7:00 AM UTC)

[TuP3G-18 LN] Photovoltage Enhancement in Structured Si/Al-doped ZnO Heterojunction via Ultra-Thin Amorphous Buffer Layer

〇Guan-Ling Hou¹, Po-Hsien Tseng², Jheng-Ming Huang³, Shang-Yu Tsai¹, Chun-Chi Chen³, Chao-Kai Cheng⁴, Yu-Sheng Lai³, Fu-Hsiang Ko¹ (1. National Yang Ming Chiao Tung Univ. (Taiwan), 2. National Taiwan Univ. (Taiwan), 3. Taiwan Semiconductor Res. Inst. (Taiwan), 4. National Synchrotron Radiation Res. Center (Taiwan))

Surface nanostructure enhances light absorption in silicon but introduces defect-rich interfaces that limit carrier transport in Si/AZO heterojunctions. In this work, an ultra-thin Al₂O₃ buffer layer is introduced by atomic layer deposition to passivate interfacial defects. Systematic studies reveal an optimal thickness of ~5 nm, achieving over 40 times photovoltage enhancement without affecting optical absorption. The improvement arises from suppressed interfacial recombination and preserved carrier transport via quantum tunneling. This study demonstrates an effective interface engineering strategy for improving defect-limited heterojunction devices.