[WeA1] Epitaxy of Novel Optical Materials

8:30 AM - 9:00 AM JST(11:30 PM - 12:00 AM UTC)

[WeA1-01 Invited] Epitaxy of Direct Band Gap Hexagonal SiGe

〇Erik Bakkers¹, Marcel Verheijen^1,2, Wouter Peeters¹, Jos Haverkort¹, Marvin Jansen¹, Mette Schouten¹, Victor van Lange¹, Marvin van Tilburg¹, Ries Koolen¹, Denny Lamon¹, Tim Goedkoop¹, Santhanu Ramanandan¹, Marco Vettori¹ (1. Eindhoven University of Technology (Netherlands), 2. Eurofins Material Science (Netherlands))

Hexagonal SiGe exhibits a direct bandgap, which opens many new possibilities for integrating photonic functionalities in Si technology. In this work, we discuss the epitaxial growth of hexagonal SiGe in various forms, including bulk layers, quantum wells, nanowires and quantum dots. We investigate the optical properties and confirm direct bandgap emission and stimulated emission from hexagonal SiGe. Our goal is to demonstrate lasing from this new material system.