Session Details

[WeA1]Epitaxy of Novel Optical Materials

Wed. May 27, 2026 8:30 AM - 10:00 AM JST
Wed. May 27, 2026 11:30 PM - 1:00 AM UTC
Room A(3rd floor)
Chair:Katsuhiro Tomioka(Hokkaido Univ.)

[WeA1-01]Epitaxy of Direct Band Gap Hexagonal SiGe

〇Erik Bakkers1, Marcel Verheijen1,2, Wouter Peeters1, Jos Haverkort1, Marvin Jansen1, Mette Schouten1, Victor van Lange1, Marvin van Tilburg1, Ries Koolen1, Denny Lamon1, Tim Goedkoop1, Santhanu Ramanandan1, Marco Vettori1 (1. Eindhoven University of Technology (Netherlands), 2. Eurofins Material Science (Netherlands))
Comment()

[WeA1-02]Strain and Defects Engineering in SAE Grown Ge Nanowires for Si
Photonics

〇Ludovica Lunghi1, Nuno Amador-Mendez1, Santhanu Panikar Ramanandan1, Thomas Bour1, Reyhaneh Ramezani1, Kamil Artur Wodzislawski3, Alok Rudra3, Mariona Bonas Vera5, Kirsten Moselund4,5, Anna Fontcuberta i Morral2,1 (1. Lab. of Semiconductor Materials, Inst. of Materials, École polytechnique fédérale de Lausanne (EPFL), Univ. (Switzerland), 2. Inst. of Physics, École polytechnique fédérale de Lausanne (EPFL), Univ. (Switzerland), 3. EPiX, École polytechnique fédérale de Lausanne (EPFL), Lab. (Switzerland), 4. Inst. of Photonics, École polytechnique fédérale de Lausanne (EPFL), Univ. (Switzerland), 5. Lab. of Nano and Quantum Tech., Paul Scherrer Inst. (PSI), Inst. (Switzerland))
Comment()

[WeA1-03]Germanium-Tin Thin Films and Nanostructures for Sustainable Group-IV Photonics

〇Reyhaneh Ramezani1, Andrea Giunto1, Leo Webb1, Nuño Amador-Mendez1, Ludovica Lunghi1, Ivan Sinev3, Hatice Altug3, Kirsten Emilie Moselund4,5, Anna Fontcuberta i Morral1,2 (1. Lab. of Semiconductor Materials, Inst. of Materials, École polytechnique fédérale de Lausanne (EPFL), Univ. (Switzerland), 2. Inst. of Physics, École polytechnique fédérale de Lausanne (EPFL), Univ. (Switzerland), 3. Bionanophotonic Systems Lab., École polytechnique fédérale de Lausanne (EPFL), Univ. (Switzerland), 4. Integrated Nanoscale Photonics and Optoelectronics Lab., Inst. of Photonics, École polytechnique fédérale de Lausanne (EPFL), Univ. (Switzerland), 5. Lab. of Nano and Quantum Tech., Paul Scherrer Inst. (PSI) (Switzerland))
Comment()

[WeA1-04]Atomic-Scale Silicon Surface Engineering for III–V and Ge Integration

〇XUANCHANG ZHANG1, Huiwen Deng1, Haotian Zeng1, Hui Jia1, Mengxun Bai1, Danqi Lei1, Suguo Huo2, Hexing Wang1, Liwei Cao3, Talyor Stock1, Wei Li3, Siming Chen1, Alwayn Seeds1, Huiyun Liu1, Mingchu Tang1 (1. University College London (UK), 2. London Centre for Nanotechnology (UK), 3. Beijing University of Technology (China))
Comment()

[WeA1-05]Effect of Epitaxial Growth Temperature on Interfacial and Optical Quality in InAs/GaSb Type-II Superlattices

〇Bhavya Kondapavuluri1, Wei-Sheng Liu1, Yung-Jyun Liao1, Balaji Gururajan1, Jen-Inn Chyi2 (1. Yuan Ze Univ. (Taiwan), 2. National Central Univ. (Taiwan))
Comment()