Presentation Information
[WeA1-02]Strain and Defects Engineering in SAE Grown Ge Nanowires for Si
Photonics
〇Ludovica Lunghi1, Nuno Amador-Mendez1, Santhanu Panikar Ramanandan1, Thomas Bour1, Reyhaneh Ramezani1, Kamil Artur Wodzislawski3, Alok Rudra3, Mariona Bonas Vera5, Kirsten Moselund4,5, Anna Fontcuberta i Morral2,1 (1. Lab. of Semiconductor Materials, Inst. of Materials, École polytechnique fédérale de Lausanne (EPFL), Univ. (Switzerland), 2. Inst. of Physics, École polytechnique fédérale de Lausanne (EPFL), Univ. (Switzerland), 3. EPiX, École polytechnique fédérale de Lausanne (EPFL), Lab. (Switzerland), 4. Inst. of Photonics, École polytechnique fédérale de Lausanne (EPFL), Univ. (Switzerland), 5. Lab. of Nano and Quantum Tech., Paul Scherrer Inst. (PSI), Inst. (Switzerland))
Germanium is a key material for monolithically integrated photonic devices on silicon,
offering compatibility with standard CMOS processing while enabling high-speed detectors, modulators,
and co-integration of electronic and photonic devices. Selective Area Epitaxy (SAE) provides a powerful
route to locally engineer strain, defects, and morphology in Ge nanostructures, which are critical parameters
for optimizing device performance. In this work, SAE enabled the study of growth dynamics as a function
of nominal nanowire width and their influence on morphology and crystalline quality. Furthermore, the
Template-Assisted Selective Epitaxy (TASE) approach enabled the growth of highly strained germanium
nanowires, offering enhanced strain engineering capabilities.
offering compatibility with standard CMOS processing while enabling high-speed detectors, modulators,
and co-integration of electronic and photonic devices. Selective Area Epitaxy (SAE) provides a powerful
route to locally engineer strain, defects, and morphology in Ge nanostructures, which are critical parameters
for optimizing device performance. In this work, SAE enabled the study of growth dynamics as a function
of nominal nanowire width and their influence on morphology and crystalline quality. Furthermore, the
Template-Assisted Selective Epitaxy (TASE) approach enabled the growth of highly strained germanium
nanowires, offering enhanced strain engineering capabilities.
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