[WeA1] Epitaxy of Novel Optical Materials

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[WeA1-02] Strain and Defects Engineering in SAE Grown Ge Nanowires for Si
Photonics

〇Ludovica Lunghi¹, Nuno Amador-Mendez¹, Santhanu Panikar Ramanandan¹, Thomas Bour¹, Reyhaneh Ramezani¹, Kamil Artur Wodzislawski³, Alok Rudra³, Mariona Bonas Vera⁵, Kirsten Moselund^4,5, Anna Fontcuberta i Morral^2,1 (1. Lab. of Semiconductor Materials, Inst. of Materials, École polytechnique fédérale de Lausanne (EPFL), Univ. (Switzerland), 2. Inst. of Physics, École polytechnique fédérale de Lausanne (EPFL), Univ. (Switzerland), 3. EPiX, École polytechnique fédérale de Lausanne (EPFL), Lab. (Switzerland), 4. Inst. of Photonics, École polytechnique fédérale de Lausanne (EPFL), Univ. (Switzerland), 5. Lab. of Nano and Quantum Tech., Paul Scherrer Inst. (PSI), Inst. (Switzerland))

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