[WeA1] Epitaxy of Novel Optical Materials

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[WeA1-05] Effect of Epitaxial Growth Temperature on Interfacial and Optical Quality in InAs/GaSb Type-II Superlattices

〇Bhavya Kondapavuluri¹, Wei-Sheng Liu¹, Yung-Jyun Liao¹, Balaji Gururajan¹, Jen-Inn Chyi² (1. Yuan Ze Univ. (Taiwan), 2. National Central Univ. (Taiwan))

This study examines the structural and optical evolution of InAs/GaSb Type-II superlattices (T2SLs) grown by molecular beam epitaxy at varying temperatures. We demonstrate that lower growth temperatures (365°C) are critical for preserving the InSb strain-compensation layer and interfacial abruptness. Conversely, higher temperatures (405°C) promote Group-V anion exchange, leading to structural relaxation and the formation of parasitic InAsSb-like alloys. These interfacial defects result in a redshifted photoluminescence emission and spectral broadening, underscoring the necessity of kinetic control for high-quality T2SL materials.