[WeB2] Thin Film Growth of Oxides

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[WeB2-01] Pulsed-Liquid Injection MOCVD of Epitaxial Ga₂O₃ Thin Films

〇Marielena Velasco Enriquez^1,2, Carmen Jimenez¹, Isabelle Gelard¹, Hervé Roussel¹, Sonia Ortega¹, Martin Broens^3,1, Laetitia Rapenne¹, Fabrice Donatini², Philippe Ferrandis², Eirini Sarigiannidou¹, Vincent Consonni¹ (1. LMGP (France), 2. Inst. Néel (France), 3. Universidad de Zaragoza (Spain))

The epitaxial growth of gallium oxide (Ga₂O₃) thin films exhibits great potential in power electronics and optoelectronics applications, owing to its promising properties (ultra-wide bandgap of 4.6-4.9 eV, breakdown field estimated to 8MV/cm, broadband photodetection, etc.). This work explores their growth onto c-plane sapphire substrates using pulsed-liquid injection metal-organic chemical vapor deposition (PLI-MOCVD), an alternative technique offering superior precursor dosing efficiency compared to conventional MOCVD, as an important consideration for the sake of sustainability and gallium criticality. Using triethylgallium and O2, high-quality thin films of phase-pure β- or mixed β/κ-Ga₂O₃ were achieved by optimizing growth parameters, as validated by a large number of microscopy, diffraction, and spectroscopy techniques.