Session Details
[WeB2]Thin Film Growth of Oxides
Wed. May 27, 2026 10:30 AM - 11:45 AM JST
Wed. May 27, 2026 1:30 AM - 2:45 AM UTC
Wed. May 27, 2026 1:30 AM - 2:45 AM UTC
Room B(3rd floor)
Chair: Takami Abe(Iwate University), Takayoshi Oshima(National Institute for Materials Science)
[WeB2-01]Pulsed-Liquid Injection MOCVD of Epitaxial Ga2O3 Thin Films
〇Marielena Velasco Enriquez1,2, Carmen Jimenez1, Isabelle Gelard1, Hervé Roussel1, Sonia Ortega1, Martin Broens3,1, Laetitia Rapenne1, Fabrice Donatini2, Philippe Ferrandis2, Eirini Sarigiannidou1, Vincent Consonni1 (1. LMGP (France), 2. Inst. Néel (France), 3. Universidad de Zaragoza (Spain))
[WeB2-02]ALD of Epitaxial (002) κ-Ga2O3 Thin Films on c-Plane Sapphire
〇Andy Séguret1,2, Ilyass Jellal1, Matthieu Weber1, Hervé Roussel1, Isabelle Gelard1, Hanako Okuno3, Laetitia Rapenne1, Eirini Sarigiannidou1, Eva Monroy2, Vincent Consonni1 (1. Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP (France), 2. Univ. Grenoble-Alpes, CEA, Grenoble INP, IRIG, PHELIQS (France), 3. Univ. Grenoble-Alpes, CEA, Grenoble INP, IRIG, MEM (France))
[WeB2-03]Effect of Deposition Temperature on the Composition of Al1-xTixOy Films via Single-Source Mist-CVD System
〇Thin Nu Soe1, Hiroshi Otake1, Yusui Nakamura1, Zenji Yatabe2 (1. Kumamoto Univ. (Japan), 2. Hokkaido Univ. (Japan))
[WeB2-04]Development of Rhombohedral (InxGa1-x)2O3 on c-Sapphire Using α-Ga2O3 Buffer Layer by Mist Chemical Vapor Deposition
〇Sohaib Hassan1, Abhay Kumar Mondal1, Kun Liu1, Htet Su Wai 1, Toshiyuki Kawaharamura1 (1. Kochi University of Technology (Japan))
[WeB2-05]Influence of Mist CVD Reactor Design on the Structural and Morphological Properties of ZnO Thin Films
〇HTET SU WAI1, Ryosuke Ohashi1, Tatsuya Yasuoka, Toshiyuki Kawaharamura1 (1. Kochi Univ. of Tech. (Japan))
